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| BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications * High Gain General Purpose * Power Darlington TR * Complement to BDX34/34A/34B/34C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W C C Value Units IC ICP IB PC TJ TSTG (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BDX33/A/B/C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C ICEO Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C IEBO hFE Emitter Cut-off Current * DC Current Gain : BDX33/34 : BDX33B/33C VCE(sat) * Collector-Emitter Saturation Voltage : BDX33/33A : BDX33B/33C * Base-Emitter ON Voltage : BDX33/33A : BDX33B/33C * Parallel Diode Forward Voltage VCE = 3V, IC = 4A VCE = 3V, IC = 3A IC = 4A, IB = 8mA IC = 3A, IB = 6mA VCE = 3V, IC = 4A VCE = 3V, IC = 3A IF = 8A 750 750 2.5 2.5 2.5 2.5 4 V V V V V VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 0.5 0.5 0.5 0.5 5 mA mA mA mA mA VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 0.2 0.2 0.2 0.2 mA mA mA mA Test Condition IC = 100mA IB = 0 Min. 45 60 80 100 45 60 80 100 45 60 80 100 Typ. Max. Units V V V V V V V V V V V V VCER(sus) IC = 100mA, IB = 0 RBE = 100 VCEV(sus) IC = 100mA, IB = 0 VBE = 1.5V ICBO VBE(on) VF * Pulse Test: PW=300s, duty Cycle =1.5% Pulse (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BDX33/A/B/C Typical Characteristics 100k 10 10k VCE(sat) [V], SATURATION VOLTAGE VCE = 3 V IC= 250 IB hFE, DC CURRENT GAIN 1 1k 100 0.1 1 10 0.1 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 10.0 1000 VCE = 3 V f=1MHz IE=0 IC [A], COLLECTOR CURRENT 5.0 Cob [pF], CAPACTIANCE 0 1 2 3 4 7.5 100 2.5 0.0 10 1 10 100 VBE [V], BASE-EMITTER VOLTAGE VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance 100 80 70 IC [A], COLLECTOR CURRENT IC MAX. (Pulsed) 10 5 ms 1 ms 100 us 10 us PD [W], POWER DISSIPATION 60 50 IC MAX. (Continuous) DC 40 30 1 20 BDX33 BDX33A BDX33B BDX33C 0.1 1 10 100 1000 10 0 0 25 50 75 100 125 150 175 200 VCE [V], COLLECTOR-EMITTER VOLTAGE Tc [ C], CASE TEMPERATURE o Figure 5. Safe Operating Area Figure 6. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BDX33/A/B/C Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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